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TYPICAL PERFORMANCE CURVES (R)
APT35GN120B APT35GN120BG*
APT35GN120B(G) 1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses.
TO -2 47
G
C
E
* * * *
* 1200V NPT Field Stop
Trench Gate: Low VCE(on) Easy Paralleling 10s Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT35GN120B(G) UNIT Volts
1200 30 94 46 105 105A @ 1200V 379 -55 to 150 300
Amps
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
1200 5 1.4
2 2
5.8 1.7 1.9
6.5 2.1
Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
Volts
I CES I GES RGINT
100 TBD 600 6
Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7601
Rev C
10-2005
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C)
A
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT35GN120B(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 35A TJ = 150C, R G = 2.2 7, VGE = 15V, L = 100H,VCE = 1200V VCC = 960V, VGE = 15V, TJ = 125C, R G = 2.2 7 Inductive Switching (25C) VCC = 800V VGE = 15V I C = 35A VGE = 15V MIN TYP MAX UNIT pF V nC
2500 150 120 9.5 220 15 130 105 10 24 22 300 55 TBD 2395 2315 24 22 365 100 TBD 3745 3435 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
s
RG = 2.2 7 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 800V VGE = 15V I C = 35A
Turn-on Switching Energy (Diode)
66
TJ = +125C
RG = 2.2 7
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.33 N/A 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.)
10-2005
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7601
Rev C
TYPICAL PERFORMANCE CURVES
120 100 80 60
120
APT35GN120B(G)
15V
15V
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
12V
100 80 60 40 20 0
12V 11V 10V 9V 8V 7V
11V
10V
40
9V
20 0
8V
100
FIGURE 1, Output Characteristics(TJ = 25C)
250s PULSE TEST<0.5 % DUTY CYCLE
7V 0 2 4 6 8 10 12 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 35A C T = 25C
J
0 2 4 6 8 10 12 14 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
80
VCE = 240V
VCE = 600V
60
TJ = 125C
TJ = 25C
40
TJ = -55C
8 6 4 2 0
VCE = 960V
20
0
0
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
50
100 150 200 GATE CHARGE (nC)
250
FIGURE 4, Gate Charge
3
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4 3.5 3 2.5 2 1.5 1.0 0.5
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 70A
2.5 2
IC = 70A
IC = 35A
IC = 35A
1.5 1 0.5
IC = 17.5A
IC = 17.5A
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
0
8
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
140
0 -50
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.05
IC, DC COLLECTOR CURRENT(A)
120 100 80 60 40 20 10-2005 050-7601 Rev C
Lead Temperature Limited
1.00
0.95
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90 -50
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
0 -50
30 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 25
VGE = 15V
450 350 300 250 200 150 100 50 0
VCE = 800V RG = 2.2 L = 100 H VGE =15V,TJ=25C
APT35GN120B(G)
VGE =15V,TJ=125C
20 15 10 5 T = 25C, T =125C J J
80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
VCE = 800V RG = 2.2 L = 100 H
0
80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
80 70 60 50 40 30 20 10
RG = 2.2, L = 100H, VCE = 800V
150 125
tf, FALL TIME (ns)
RG = 2.2, L = 100H, VCE = 800V
tr, RISE TIME (ns)
100 75 50 25 0
TJ = 125C, VGE = 15V
TJ = 25 or 125C,VGE = 15V
TJ = 25C, VGE = 15V
80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
0
80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
12000 EON2, TURN ON ENERGY LOSS (J) 10000 8000 6000 4000 2000
EOFF, TURN OFF ENERGY LOSS (J)
V = 800V CE V = +15V GE R = 2.2
G
8000 7000 6000 5000 4000 3000 2000 1000 0
= 800V V CE = +15V V GE R = 2.2
G
TJ = 125C,VGE =15V
TJ = 125C, VGE = 15V
TJ = 25C, VGE = 15V
TJ = 25C,VGE =15V
80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
0
80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
25000 SWITCHING ENERGY LOSSES (J)
J
SWITCHING ENERGY LOSSES (J)
= 800V V CE = +15V V GE T = 125C
12000 Eon2,70A 10000 8000 6000 4000 2000 0
= 800V V CE = +15V V GE R = 2.2
G
20000
Eon2,70A
15000
Eoff,70A
10000
Eoff,70A
10-2005
Eon2,35A Eoff,17.5A Eon2,17.5A
0
5000
Eon2,35A Eon2,17.5A
Rev C
Eoff,35A Eoff,17.5A
Eoff,35A
050-7601
50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0
0
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
4,000 Cies C, CAPACITANCE ( F) 1,000 500 IC, COLLECTOR CURRENT (A)
120 100 80 60 40 20
APT35GN120B(G)
P
C0es 100 50 Cres
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.35 0.30 0.25 0.20 0.5 0.15 0.10 0.05 0 0.3 SINGLE PULSE
Note:
ZJC, THERMAL IMPEDANCE (C/W)
0.9
0.7
PDM
t1 t2
0.1 0.05 10-5 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
RC MODEL
140 FMAX, OPERATING FREQUENCY (kHz)
Junction temp. (C) 0.163 Power (watts) 0.168 Case temperature. (C) 0.181F 0.00661F
10
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
T = 125C J T = 75C C D = 50 % V = 800V CE R = 2.2
G
F
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
20 30 40 50 60 70 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
10
050-7601
Rev C
10-2005
APT35GN120B(G)
APT40DQ120
10% td(on)
Gate Voltage TJ = 125C
V CC
IC
V CE
90% tr
Collector Current
A D.U.T.
5%
Switching Energy
10%
5% CollectorVoltage
Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
90%
*DRIVER SAME TYPE AS D.U.T.
Gate Voltage td(off) CollectorVoltage 90% TJ = 125C
A V CE 100uH
tf 10%
IC V CLAMP B
0
Collector Current
A DRIVER* D.U.T.
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max.
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
10-2005
0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800)
1.01 (.040) 1.40 (.055)
Rev C
Gate Collector Emitter
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
050-7601
Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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